schottky barrier diode RB225NS-40 l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)cathode common dual type.(lpds) 2)low i r l construction l structure silicon epitaxial planer l absolute maximum ratings (tc=25 ? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c l electrical characteristics (tj=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - 0.53 0.63 v i f =15a reverse current i r - 0.08 0.5 ma v r =40v thermal resistance rth (j-c) - - 2.00 c/w junction to case storage temperature - 40 to + 150 (*1) 60hz half sin wave, vesistive load at tc=70c. 1/2 io per diode parameter average rectified forward current (*1) 30 forward current surge peak (60hz ? 1cyc) (*1) 100 junction temperature 150 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 40 reverse voltage (dc) 40 rohm : lpds jeita : to263s manufacture year, week and day rb225 ns40 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. www.datasheet.co.kr datasheet pdf - http://www..net/
RB225NS-40 0.01 0.1 1 10 100 0 100 200 300 400 500 600 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta= - 25 c ta=125 c ta=25 c ta=150 c ta=75 c 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 reverse current:i r ( m a) reverse voltage v r (v) v r - i r characteristics ta= - 25 c ta=25 c ta=75 c ta=150 c ta=125 c 10 100 1000 10000 0 10 20 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 510 520 530 540 550 560 v f dispersion map forward voltage:v f (mv) ave:534.5mv ta=25 c i f =15a n=30pcs 0 100 200 300 400 500 600 700 800 900 1000 reverse current:i r ( m a) i r dispersion map ta=25 c v r =40v n=30pcs ave:78.7 m a 2450 2460 2470 2480 2490 2500 2510 2520 2530 2540 2550 ave:2515.6pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RB225NS-40 0 50 100 150 200 250 300 ave:176.0a 8.3ms 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 35 40 45 50 ave:27.4ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 10 100 1000 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 10 20 30 40 50 0 10 20 30 40 50 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( 180) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RB225NS-40 0 2 4 6 8 10 0 10 20 30 40 d=1/2 dc sin( 180) reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =20v 0a 0v d=1/2 sin( 180) d.c. 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k c=200pf r=0 ave:25.7kv electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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